首页 历史故事高质量GaN薄膜的生长及其研究综述

高质量GaN薄膜的生长及其研究综述

【摘要】:[AMA 86] AMANO H.,SAWAKI N.,AKASAKI I.,TOYODA T.,“Metalorganic va-por phase epitaxial growth of a high quality GaN film using an AIN buffer layer”,AppliedPhysicsLetters,no.48,p.353-355,1986.[AOK 00] A

[AMA 86] AMANO H.,SAWAKI N.,AKASAKI I.,TOYODA T.,“Metalorganic va-por phase epitaxial growth of a high quality GaN film using an AIN buffer layer”,AppliedPhysicsLetters,no.48,p.353-355,1986.

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[1]105 Pa=1bar(大气压)